 |
IDC08S120EX7SA1
IR (Infineon Technologies)
|
DIODE SCHOTTKY 1.2KV 7.5A WAFER |
Chámame
|
|
 |
GATELEAD1110008XPSA1
IR (Infineon Technologies)
|
HIGH POWER THYR / DIO |
|
|
 |
IRD3CH5DB6
IR (Infineon Technologies)
|
DIODE GEN PURP 1.2KV 5A DIE |
Chámame
|
|
 |
SIDC42D120F6X1SA3
IR (Infineon Technologies)
|
DIODE GEN PURP 1.2KV 50A WAFER |
Chámame
|
|
 |
SIDC85D170HX1SA2
IR (Infineon Technologies)
|
DIODE GEN PURP 1.7KV 150A WAFER |
Chámame
|
|
 |
IRD3CH31DB6
IR (Infineon Technologies)
|
DIODE CHIP EMITTER CONTROLLED |
Chámame
|
|
 |
IDC08S60CEX1SA3
IR (Infineon Technologies)
|
DIODE SIC 600V 8A SAWN WAFER |
Chámame
|
|
 |
IRD3CH82DF6
IR (Infineon Technologies)
|
DIODE CHIP EMITTER CONTROLLED |
Chámame
|
|
 |
D1050N12TXPSA1
IR (Infineon Technologies)
|
DIODE GEN PURP 1.2KV 1050A |
Chámame
|
|
 |
SIDC04D60F6X1SA4
IR (Infineon Technologies)
|
DIODE SWITCHING 600V WAFER |
Chámame
|
|
 |
SIDC81D120H8X1SA3
IR (Infineon Technologies)
|
DIODE GEN PURP 1.2KV 150A WAFER |
Chámame
|
|
 |
ND171N12KHPSA1
IR (Infineon Technologies)
|
DIODE GP 1.2KV 171A BG-PB34-1 |
- 1: $132.74625
- 8: $120.67782
|
|
 |
SIDC24D30SIC3
IR (Infineon Technologies)
|
DIODE SILICON 300V 10A WAFER |
Chámame
|
|
 |
GATELEADWH406XPSA1
IR (Infineon Technologies)
|
STD THYR/DIODEN DISC |
|
|
 |
SIDC09D60F6X1SA5
IR (Infineon Technologies)
|
DIODE SWITCHING 600V WAFER |
Chámame
|
|
 |
ND261N26KHPSA1
IR (Infineon Technologies)
|
DIODE GP 2.6KV 260A BG-PB50ND-1 |
- 1: $161.96667
- 3: $147.24333
|
|
 |
SIDC56D170E6X1SA1
IR (Infineon Technologies)
|
DIODE GEN PURP 1.7KV 75A WAFER |
Chámame
|
|
 |
IRD3CH24DF6
IR (Infineon Technologies)
|
DIODE CHIP EMITTER CONTROLLED |
Chámame
|
|
 |
SIDC06D60E6X7SA1
IR (Infineon Technologies)
|
DIODE SWITCHING 600V WAFER |
Chámame
|
|
 |
IDC10D120T6MX1SA1
IR (Infineon Technologies)
|
DIODE GEN PURP 1.2KV 15A WAFER |
|
|